By Robert B. Marcus
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Shipped from united kingdom, please let 10 to 21 company days for arrival. size of high-speed signs in stable country units. Semiconductors and Semimetals quantity 28, hardcover, xv, 438 p. : sick. solid fresh replica
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Additional resources for Measurement of High-Speed Signals in Solid State Devices
After Buot and Frey, 1983) and is very small. Figure 6 depicts an n-channel MOSFET in which electrons carry current between the source and the drain. In this device, the source-substrate junction is forward-biased, and the drain-substrate junction is biased. With no voltage on the gate, current cannot flow between source and drain. Making the gate more positive than a threshold voltage required to overcome charges trapped at the silicon-oxide interface and 1. 6. Schematic diagram of MOSFET. (After Kahng and Atalla, 1960; and Sze, 1981) within the oxide itself, as well as work function differences between the gate material and the silicon, causes an appreciable number of electrons to be drawn from the bulk material to the surface, forming a conducting channel from source to drain.
The generation of carrier pairs by photons is a much more probable occurrence than the generation of photons by recombination of carrier pairs, so that photodetectors do not need direct-gap semiconductors. To achieve the desired photodetector characteristics of high sensitivity and speed, photodetectors may be made in the form of heterostructure devices, including phototransistors. To lower systems costs and improve performance, detectors and emitters may be fabricated together as optoelectronic integrated circuits (OEICs).
Transferred Electron Amplifiers and Oscillators,” Proc. I R E 50, 185. Hilsum, C. (1978). “Historical Background of Hot Electron Physics,” Solid State Electron. 21, 5. G. (1987). Analysis and Design of Digital Integrated Circuits, 2nd ed. McGraw-Hill, New York. Hooper. W . W . I. (1967). “An Epitaxial GaAs Field-Effect Transistor,” Proc. IEEE 55, 1237. F. (1966). “Electroluminescence and Semiconductor Lasers,” I E E E J . Quantum Electron. QE-2, 713. 1. , (1960). “A Historical Perspective on the Development of MOS Transistors and Related Devices,” ED-23, 655.