Measurement of High-Speed Signals in Solid State Devices by Robert B. Marcus

By Robert B. Marcus

Shipped from united kingdom, please let 10 to 21 company days for arrival. size of high-speed signs in strong country units. Semiconductors and Semimetals quantity 28, hardcover, xv, 438 p. : unwell. stable fresh reproduction

Show description

Read or Download Measurement of High-Speed Signals in Solid State Devices PDF

Similar mechanical engineering books

Model Boilers And Boiler Making

9 chapters protecting normal issues and ideas, potency, layout gains and normal proportions.

Considers different types of boiler, tools of building, flanging & forming plates, mountings & fittings, starting up, annealing, riveting, fuels and firing equipment, boiler mountings, protection valves, water gauges, strain gauges, cease valves, steam fountains, clack valves, blow-down valves, regulators, domes, steam creditors and separators, trying out version boilers, try pressures, equipment of checking out, tube proportions (spacing and structure, superheaters and feedwater heaters), version locomotive-type boilers, and boiler designs. comprises the tables: houses of saturated steam, calorific values of assorted fuels, tube circumferences and floor parts, and so forth, gauges and weights of sheet copper, suggested screw threads for pipes and fittings, power of around copper remains, security valve sizes, houses of J. M. C silver brazing alloys, boiler evaporation figures.

Many Machinist tasks, would receive advantages from examining this book.

Measurement of High-Speed Signals in Solid State Devices

Shipped from united kingdom, please let 10 to 21 company days for arrival. size of high-speed signs in stable country units. Semiconductors and Semimetals quantity 28, hardcover, xv, 438 p. : sick. solid fresh replica

Mechanics and Electrodynamics of Magneto- and Electro-elastic Materials (CISM International Centre for Mechanical Sciences)

This quantity offers a state of the art evaluate of the continuum thought of either electro- and magneto-sensitive elastomers and polymers, such as mathematical and computational features of the modelling of those fabrics from the perspective of fabric houses and, particularly, the "smart-material" keep an eye on in their mechanical houses.

Gas Transport in Solid Oxide Fuel Cells (SpringerBriefs in Energy)

This publication presents a finished evaluate of up to date learn and rising size applied sciences linked to fuel delivery in sturdy oxide gas cells. inside of those pages, an creation to the concept that of fuel diffusion in good oxide gasoline cells is gifted. This e-book additionally discusses the background and underlying basic mechanisms of fuel diffusion in strong oxide gas cells, common theoretical mathematical versions for gasoline diffusion, and conventional and complex strategies for fuel diffusivity dimension.

Additional resources for Measurement of High-Speed Signals in Solid State Devices

Example text

After Buot and Frey, 1983) and is very small. Figure 6 depicts an n-channel MOSFET in which electrons carry current between the source and the drain. In this device, the source-substrate junction is forward-biased, and the drain-substrate junction is biased. With no voltage on the gate, current cannot flow between source and drain. Making the gate more positive than a threshold voltage required to overcome charges trapped at the silicon-oxide interface and 1. 6. Schematic diagram of MOSFET. (After Kahng and Atalla, 1960; and Sze, 1981) within the oxide itself, as well as work function differences between the gate material and the silicon, causes an appreciable number of electrons to be drawn from the bulk material to the surface, forming a conducting channel from source to drain.

The generation of carrier pairs by photons is a much more probable occurrence than the generation of photons by recombination of carrier pairs, so that photodetectors do not need direct-gap semiconductors. To achieve the desired photodetector characteristics of high sensitivity and speed, photodetectors may be made in the form of heterostructure devices, including phototransistors. To lower systems costs and improve performance, detectors and emitters may be fabricated together as optoelectronic integrated circuits (OEICs).

Transferred Electron Amplifiers and Oscillators,” Proc. I R E 50, 185. Hilsum, C. (1978). “Historical Background of Hot Electron Physics,” Solid State Electron. 21, 5. G. (1987). Analysis and Design of Digital Integrated Circuits, 2nd ed. McGraw-Hill, New York. Hooper. W . W . I. (1967). “An Epitaxial GaAs Field-Effect Transistor,” Proc. IEEE 55, 1237. F. (1966). “Electroluminescence and Semiconductor Lasers,” I E E E J . Quantum Electron. QE-2, 713. 1. , (1960). “A Historical Perspective on the Development of MOS Transistors and Related Devices,” ED-23, 655.

Download PDF sample

Rated 4.02 of 5 – based on 11 votes