High-Operating-Temperature Infrared Photodetectors (SPIE by Jozef Piotrowski

By Jozef Piotrowski

This publication provides techniques, fabrics, and units that dispose of the cooling standards of IR photodetectors working within the heart- and long-wavelength levels of the IR spectrum. it's established frequently at the authors' reports in constructing and fabricating close to room temperature HgCdTe detectors at Vigo structures Ltd. and on the Institute of utilized Physics army collage of know-how (both in Warsaw, Poland).

The textual content additionally discusses ideas to different particular difficulties of high-temperature detection, corresponding to terrible assortment potency as a result of a quick diffusion size, the Johnson-Nyquist noise of parasitic impedances, and interfacing of very low resistance units to electronics.

appropriate for graduate scholars in physics and engineering who've acquired a simple education in smooth reliable nation physics and digital circuits, this e-book may also be of curiosity to people who paintings with aerospace sensors and platforms, distant sensing, thermal imaging, army imaging, optical telecommunications, IR spectroscopy, and lidar.


- Acronyms and Abbreviations
- Preface
- Introduction
- primary functionality obstacles of Infrared Photodetectors
- fabrics Used for Intrinsic Photodetectors
- Intrinsic Photodetectors
- Hg1-xCdxTe Photoconductors
- Hg1-xCdxTe Photodiodes
- Photoelectromagnetic, Magnetoconcentration, and Dember IR Detectors
- Lead Salt Photodetectors
- substitute Uncooled Long-Wavelength IR Photodetectors
- ultimate Remarks
- Index

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High-Operating-Temperature Infrared Photodetectors (SPIE Press Monograph Vol. PM169)

This booklet provides ways, fabrics, and units that get rid of the cooling specifications of IR photodetectors working within the heart- and long-wavelength levels of the IR spectrum. it truly is established customarily at the authors' studies in constructing and fabricating close to room temperature HgCdTe detectors at Vigo structures Ltd.

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Extra info for High-Operating-Temperature Infrared Photodetectors (SPIE Press Monograph Vol. PM169)

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Electon. 11, 205–346 (1987). M. Sioma and J. Piotrowski, “Modelling and optimization of high temperature detectors of long wavelength IR radiation with optical resonant cavity,” OptoElectr. Rev. 12, 157–160 (2004). J. Kaniewski, J. Muszalski, J. Pawluczyk, and J. 55 µm infrared radiation,” Proc. SPIE 5783, 47–56 (2005). J. E. Slavek and H. H. Randal, “Optical immersion of HgCdTe photoconductive detectors,” Infrared Phys. 15, 339–340 (1975). M. Grudzie´n and J. Piotrowski, “Monolithic optically immersed HgCdTe IR detectors,” Infrared Phys.

Both Tesolution growth (420–500◦ C) and Hg-solution growth (360–500◦ C) have been used with equal success in a variety of configurations. 1 atm) and is most frequently used to grow the whole device structures or the base layers only. 43, 58–61 Remaining problems with LPE are the sharpness of the interface region, relatively high density of misfit and threading dislocations, complete Te-rich melt weeping off the grown layers, precipitation of Te upon cooling, low distribution of coefficients for important acceptors As and Sb, frequent occurrences of a terraced surface morphology, and the process of scaling-up to meet industrial needs.

16. C. T. Elliott and N. T. Gordon, “Infrared detectors,” in Handbook on Semiconductors, Vol. 4, C. ), North-Holland, Amsterdam, 841–936 (1993). 17. C. T. Elliott, “Photoconductive and non-equilibrium devices in HgCdTe and related alloys,” in Infrared Detectors and Emitters: Materials and Devices, 279– 30 18. 19. 20. 21. 22. 23. 24. 25. 26. 27. 28. 29. 30. 31. 32. 33. 34. Chapter 2 312, P. T. ), Kluwer Academic Publishers, Boston (2001). D. L. 6 µm photomixer arrays at 195 K,” in Proc. IRIS Active Systems, 331–349 (1984).

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