By Osamu Oda
This publication is anxious with compound semiconductor bulk fabrics and has been written for college kids, researchers and engineers in fabric technology and equipment fabrication. It bargains them the common and intermediate wisdom of compound semiconductor bulk fabrics invaluable for coming into this box. within the first half, the ebook describes the actual homes, crystal progress applied sciences, ideas of crystal progress, numerous defects in crystals, characterization options and functions. within the moment and the 3rd components, the booklet studies quite a few compound semiconductor fabrics, together with vital commercial fabrics and the result of contemporary study.
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Extra info for Compound Semiconductor Bulk Materials and Characterizations
17(a) shows the temperature dependence of electron mobilities of 111-V compound semiconductors compared with Si and Ge. In the case of Si and Ge, since the purity of Si and Ge is of the order of 10l2~ m -there ~ , is no impurity scattering even at low temperatures and the electron mobilities rise as the temperature falls. In the case of 111-V crystals, there is a peak at around 100 K and at tempera- Fig. 1 . 1 7 Temperature dependence of ( a ) electron mobilities (from Ref. 34 with permission) and hole mobilities (reprinted from Ref.
4 Solid Phase Reaction (Solid State Recrystallization) This method is based on recrystallization via grain growth in the solid state. When crystals with small grains are annealed below the melting point, grain growth occurs and a single grain becomes a large grain with the single phase. 5 MODIFICATION OF CRYSTAL GROWTH METHODS The above mentioned methods are the fundamental methods for crystal growth. In reality, several modifications can be applied for more effective crystal growth. 1 In-Situ Synthesis In most compound semiconductors, the pre-synthesized material is used for growing crystals.
It is therefore not desirable for the temperature profile to change during crystal growth. This therefore is a disadvantage of the VB method. Ostrogorsky et al. have developed the Submerged Heater Method (SHM). 3 2 , 3 3 In this method, the temperature difference and the distance between the growth interface and the submerged heater are held constant so that crystal growth can be performed without significant convection and the segregation of impurities can be kept constant. 34in a pyrolytic boron nitride crucible without using seed crystals.