Chemical Mechanical Polishing in Silicon Processing by R.K. Willardson and Eicke R. Weber (Eds.)

By R.K. Willardson and Eicke R. Weber (Eds.)

On the grounds that its inception in 1966, the sequence of numbered volumes often called Semiconductors and Semimetals has wonderful itself during the cautious collection of famous authors, editors, and participants. The Willardson and Beer sequence, because it is celebrated, has succeeded in generating various landmark volumes and chapters. not just did a lot of those volumes make an impression on the time in their book, yet they remain well-cited years after their unique unlock. lately, Professor Eicke R. Weber of the collage of California at Berkeley joined as a co-editor of the sequence. Professor Weber, a widely known professional within the box of semiconductor fabrics, will additional give a contribution to carrying on with the sequence' culture of publishing well timed, hugely correct, and long-impacting volumes. a few of the contemporary volumes, corresponding to Hydrogen in Semiconductors, Imperfections in III/V fabrics, Epitaxial Microstructures, High-Speed Heterostructure units, Oxygen in Silicon, and others promise that this custom might be maintained or even expanded.Reflecting the really interdisciplinary nature of the sphere that the sequence covers, the volumes in Semiconductors and Semimetals were and may stay of serious curiosity to physicists, chemists, fabrics scientists, and equipment engineers in sleek undefined.

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Jairath, “A Wide Margin C M P and Clean Process for Shallow Trench Isolation Applications,” 1998 Proceedings of the Third International ChemicalMechanical Planarization for ULSI Multilevel Interconnection Conference (CMP-MIC), Santa Clara, CA, pp. 319-327, Feb. 19-20, 1998. 13. N. Shendon, D. R. Smith, US. Patent #5,582,534, Dec. 10, 1996. 14. T. Bibby, A. Zutshi, Y. Gotkis, J. D. Lee, J. Yang, C. Barns, K. Holland, “Advantages of Orbital CMP Technology for Oxide and Metal Planarization,” presented at Semicon Taiwan, Hsinchu, Taiwan, Sept.

Mallon, B. Withers, D. W. S. Patent #5,722,877, Mar. 3, 1998. 39. A. K. Pant, D. W. Young, A. S. Meyer, K. Volodarsky, D. E. Weldon, US. Patent #5,800,248, issued Sep. 1, 1998. 40. S. Morimoto, R. J. S. Patent #5,127,196, issued July 7, 1992. 41. R. J. S. Patent #4,450,652, issued May 29, 1984. 42. G. S. Sandhu, T. T. S. Patent #5,762,537, issued Jun. 9, 1998. 43. I. Ali, S. R. Roy, G. Shinn, C. Tipton, “The Effect of Pad Conditioning on Chemical Mechanical Planarization (CMP) of Interlayer Dielectric (ILD),” 1995 Proceedings of the 44 THOMAS BIBBYAND KAREYHOLLAND First International Dielectrics for VLSIIULSI Multilevel Interconnection Conference (DUMIC), pp.

Meeting Technical Digest, pp. 209-212, 1987. 2. S . Pennington, S. Luce, “Improved Process Latitude with Chemical-Mechanical Polishing,” Proceedings of the VMIC Conference, pp. 168-172 Santa Clara, CA, June 9-10, 1992. 3. J. M. Steigerwald, S . P. Murarka, R. J. , 1997. 4. K. Holland, T. 35pm and Beyond,” SEMI Technical Symposium, Makuhari Messe, Chiba, Japan, Dec. 4-6, 1996. 5. D. T. Price, R. J. Gutmann, S . P. Murarka, “Damascene copper interconnects with polymer ILDs,” J. Thin Solid Films, 308-309, pp.

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