Characterization Of Semiconductor Materials by McGuire G. E. (ed.)

By McGuire G. E. (ed.)

Characterization of semiconductor fabrics and techniques used to represent them can be defined widely during this new Noyes sequence. Written through specialists in every one topic quarter, the sequence will current the main updated info to be had during this speedily advancing box. comprises chapters on electric Characterization, Ion Mass Spectrometry, Photoelectron Spectroscopy, Ion/Solid Interactions and extra.

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S. Prussin Junction Depth Measurement for VLSI Structures, J. Electrochem. Sot. 130, 184-187 (1983). C. D. Plummer Electron Mobility in Inversion and Accumulation Layers on Thermally IEEE ED-27, 1497-1508 (1980). Oxidized Silicon Surfaces, Electrical Characterization of Semiconductor Materials and Devices 41 17. M. C. Anderson An Investigation of Carrier Transport in Thin Silicon-on-Sapphire Films Using MIS Deep Depletion Hall Effect Structures, Solid State Electron. 15, 53 l-545 (1972). 18. R.

Phys. 46, 2638-2644, (1975). 96. S. Y. G. V. Lang, Deep Level Transient Spectroscopy: System Effects and Data Analysis, J. Appl. Phys. 50, 5093-5096 (1979). 97. D. J. N. F. I. M. Ransom, Analysis of Exponential and Nonexponential Transients in DLTS, J. Appl. Phys 52, 6462-6471 (1981). 98. M. A. Mlttoneau and A. Mircea, Electron Traps in Bulk and Epitaxial GaAs Crystals, Electron. Lett. 13, pp. 191-192 (1977). 99. A. M. Martin, and A. Mircea, HoleTraps in Bulk and Epitaxial GaAs Crystals, Electron.

At t=O, is given by AC0 = W,) - C(t,> exP(tl/Z,,,) - exp&,/2,,,> (25) This equation is valid at the DLTS peak temperature for a given rate window. Because the time constant extraction is manual and hardware based, both the boxcar and lock-in amplifier techniques require multiple temperature scans to obtain enough points on the Arrhenius plot for a good linear fit. The use of a computer to digitize and store a complete transient at each temperature reduces the temperature scans needed to one. In this case rate windows can be changed by software producing many more points for activation energy determination.

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