Basic VLSI Design by Douglas A. Pucknell

By Douglas A. Pucknell

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4a) which is an alternative form of equation (2:4). 4). Sometimes it is convenient to use gate capacitance per unit area C0 (which is often denoted C0 _t) rather than C1 in this and other expressions. ,. The Saturated Region Saturation begins when Vds = Vgs - V, since at this point the IR drop in the channel equals the effective gate to channel voltage at the drain and we may assume that the current remains fairly constant as Vds increases further. 5c) The expressions derived for Ids hold for both enhancement and depletion mode devices, but it should be noted that the threshold voltage for the nMOS depletion mode device (denoted as v,d) is negative.

This higher level of integration will lead to fewer packages and interconections and to more complex systems than today. There will be a marked beneficial effect on cost and reliability of the systems that will be available to all professions and disciplines and in most aspects of everyday life. Our discussions of fabrication have in some instances simplfied the processes used in order to reveal or emphasize the essential features. Indeed, the fabrication of similar devices by different fabricators may vary considerably in detail.

Because of the simplicity, ease of fabrication, and high density per unit area of nMOS circuits, many of the earlier IC designs, still in current use, have been fabricated using nMOS technology and it is likely that nMOS and CMOS system designs will continue to co-exist for some time to come. 13 Passivate and make cuts for bonding pads Flow diagram of Berkeley n-well fabrication. 14 Twin-tub structure. 15 Thermal sequence difference between nMOS and CMOS processes. 10 BICMOS TECHNOWGY A known deficiency of MOS technology lies in the limited load driving capabilities of MOS transistors.

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