A first look at Dylan.Classes,functions,and modules by Strassman S.

By Strassman S.

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A. (1996). High-quality GaN grown directly on Sic by halide vapour phase epitaxy. 30 RICHARD J. MOLNAR Inst. Phys. , 142, 863-866. Molnar, R. , and Moustakas, T. D. (1993). Electron transport mechanism in gallium nitride. Appl. Phys. , 62, 72-74. Molnar, R. , Nichols, K. , Brown E. , and Melngailis, I. (1995). The role of impurities in hydride vapor phase epitaxially grown gallium nitride. Mater. Res. Symp. , 378, 479-484. Molnar, R. , Liau, Z. , Brown, E. , Romano, L. , and Johnson, N. M. (1996a).

The multichamber design of the MBE systems also facilitates the formation of metallic contacts. Ideal semiconductor-metal interfaces have been formed by epitaxial growth of single-crystalline A1 onto (001) GaAs (Cho 40 T. D. MOUSTAKAS and Dernier, 1978). Progress has also been made in the fabrication of ohmic contacts. The area of superlattice structures and device concepts based on such structures is one of the most active fields in scientific research today. The MBE process has contributed significantly to this new class of artificially modulated materials.

00 FIG. 12. AFM micrograph of GaN growth surface for 40-pm-thick GaN film. , 1996) for the samples measured. These values are comparable to those reported for high-quality OMVPE material. Cross-sectional transmission electron microscopy (TEM) of the GaN/ sapphire interface in samples grown by the two nucleation schemes reveals a substantially different interface, as indicated in Fig. 13. For the sample FIG. 13. Cross-sectional TEM images of GaN/Al,O, interfaces for films grown with GaCl pretreatment (top) and ZnO pretreatment (bottom).

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